Samsung has recently hosted the “Samsung Memory Tech Day 2023” at the McEnery Convention Center located in the Silicon Valley. During the occasion, Samsung showcased several groundbreaking memory solutions, including: the ultra-high-performance HBM3E DRAM Shinebolt, leading the innovation in AI technology.
LPDDR5X CAMM2 to be available in the next PC and laptop DRAM markets; Detachable AutoSSD, a vehicle-oriented SSD that allows partitioned use through storage virtualization.
Official statement
Lee Jung-bae, president of the Samsung Electronics Memory Business, revealed that since initiating the production of 12-nanometer (nm) DRAM in May, the company is currently developing next-generation 11-nm DRAM, targeting the industry’s highest level of integration. Samsung is preparing to introduce a 3D new structure for sub-10-nm DRAM, with plans to expand its capacity to more than 100 gigabits (Gb) on a single chip.
Samsung also launches its next-generation HBM3E DRAM, Shinebolt which delivers a high-performance rate of up to 9.8 Gbps per data input/output pin, which translates to processing speeds of over 1.2 TB per second.
In October 2023, Samsung introduced its new application processor (AP), the Exynos 2400 at Samsung System LSI Tech Day 2023 held in Silicon Valley. The Exynos 2400 showcases a 1.7 times increase in Central Processing Unit (CPU) performance and a whopping 14.7 times increase in AI performance compared to its predecessor, the Exynos 2200.
